GROWTH AND CHARACTERIZATION OF TERNARY CHALCOGENIDE THIN FILMS FOR EFFICIENT SOLAR CELLS AND POSSIBLE INDUSTRIAL APPLICATIONS
Abstract
Lead Silver Sulphide (PbAgS), Copper Silver Sulphide (CuAgS), Copper Zinc Sulphide (CuZnS), and Iron Copper Sulphide (FeCuS) were all present in ternary thin films.
developed using a low-cost, straightforward solution growth method with EDTA, TEA, and NH3 as
compounding agents. PYE-UNICO-UV-2102 PC was used to characterize the deposition films.
optical microscope and a spectrophotometer. The findings imply that some of the movies have
crystallographic forms. The optical and solid materials’ absorbance/transmittance spectral analysis provides
State characteristics were inferred. The reflectance, among other optical characteristics,
The solid state properties are dielectric constant and band gap energy, while the liquid state parameters are absorption coefficient, refractive index, extinction coefficient, optical conductivity, and thickness.
For each of the five types of thin films that have been developed (FeCuS, FeZnS, PbAgS, CuAgS, and
CuZnS), where UV absorbance was high and VIS-NIR absorbance was low, and the
Transmittance was high in the VIS-NIR region and low in the UV area. reflective surfaces
were low in the VIS-NIR ranges and high in the UV areas.
The absorption coefficient for FeCuS, FeZnS, PbAgS, CuAgS, and CuZnS varied between
0.1 x 106 to 1.65 x 106, 0.2 x 106 to 2.3 x 106, 0.5 x 106 to 0.9 x 106, 0.5 x 106 to 1.28 x 106, and 0.24 x 106 to 1.6 x 106 m-1, respectively. the actual essence of
1.2 to 2.3, 0.72 to 2.3, 0.1 to 2.3, 1.94 to 2.28, and 1.6 to 2.3 were the refractive index ranges.
respectively, 2.3. The related optical conductivity values were in the range of
Accordingly, the values range from 0.03×1014 s-1 to 0.6×1014 s-1, 0.07×1014 s-1, 0.06×1014 s-1 to 0.6×1014 s-1, 0.24×1014 s-1 to 0.6×1014 s-1, and 0.12×1014 s-1 to 0.6×1014 s-1. the coefficient of extinction,
varied between 0.005 and 0.038, 0.004 and 0.06, 0.010 and 140, 0.025 and 0.064, and 0.008 to
respectively, 0.082. For FeCuS, the straight band gap was between 2.4 and 2.8 eV, and 2.9 eV.
2.3 eV for CuAgS, 1.5 eV to 2.1 eV for PbAgS, and 2.2 eV to 2.4 eV for CuZnS.
For FeCuS, the indirect band gap values ranged from 0.6 eV to 1.0 eV, and 1.9 eV.
0.4 to 0.9 eV for CuZnS, 1.1 eV for CuAgS, and 0.3 to 0.8 eV for FeZnS.
The dielectric constant’s real portion had a range of 1.4 to 5.2, 0.7 to 5.2, 0.4 to 5.2, and 3.8 to
5.2 and 2.2 to 5.2, respectively, whereas the associated imaginary part of the dielectric
0.008 to 0.136, 0.008 to 0.164, 0.010 to 0.390, 0.100 to 0.290, and
correspondingly from 0.030 to 0.360.
The films are useful for solar cells due to their band gaps, which range from 1.5 eV to 2.9 eV.
This is in keeping with the discovery for the movie FeCdS.
Text Of The Chapter
Title————————ii
Certification————————–.iii
Dedication————————iv
Acknowledgement———————-.v
Table of Contents ———————.vi-xiii
Figure List: ———.————xiv-xvi
A list of the plates is provided in xvii.
Slides List ——————–.xviii
Setups List ——————-xvii
Abstract————————xviii-xix
CHAPITER 1
1.1.0 Introduction—————-1
The advantages of thin films are outlined in section 1.2.0.
1.3.0 The Study’s Purpose and Objectives –.————–.3-4
Apartment Two
2.1.0 Thin Film Optical and Solid State Properties –.———
2.1.1 Transmittance – – – – – -5 –
Absorbance———————–.6 2.1.2
Reflectance——————–.7 2.1.3
2.1.4 Absorption Coefficient — — — — 7-8
Optical Density 2.1.5 ————————. -8-9
2.2.0 Band gap and absorption edge —–. ——– 9 to 12
Absorption Edge —————–.-12-13
Optical Constants 2.2.2 ———————— 13-14
Dielectric Constant: —————–. —– 14-15
2.2.4 Optical Conductivity — — — — 15
2.2.5 Factor of the Extinction Coefficient: 1.15
2.3.0 Dispersion —.—————-.15-16
2.4.0 Photoconductivity –. –. ———————– 16-17
2.5.0 Luminescence –. –. –. —————– 17-18
Electrical Conductivity 2.6.0. -. -. -. -. -. -. -.
Thermal Conductivity 2.7.0 ——————–.18-19
Solar Energy Application 2.8.0 Spectral Selective Surfaces———-19
2.8.1 Spectral Selectivity —————–.——. 19-20
Solar Selective Absorber Surfaces (2.8.2) ————–.20-21
2.8.3 Tandems of semiconductor and metal – 21
2.8.4 Heat Mirrors ————————– 21-22
Dark Mirrors (2.8.4) ————————-22
Antireflection Coatings ———————22-23
Cold mirror coatings and spectral splitting are discussed in section 2.8.7.
Radiative cooling materials are described in Section 2.8.8.
Window Coatings ———————–23-24 (2.8.9)
Solar Control Coatings 2.9.0 —————— 24
2.9.1 Low Thermal Transmittance — — — — 24
2.9.2 Solar Controlling and Low Thermal Transmittance Materials ————–24-25
Window coatings with dynamic properties are described in Section 2.9.3 (pages 25–26).
Section Three
3.0 Techniques for Growing Thin Films –.————–.
3.1.1 Thermal Evaporation –.———————-27-29
3.1.2 Epitaxial Growth –.————————– 29-30
3.1.2.1 Molecular Beam Epitaxial (MBE) 30–32
Liquid phase epitaxy (3.1.2.2) ——————32
3.1.3 Sputtering —————————– 32-34
Chemical Vapour Deposition (CVD) 3.1.4 – 34–36
Spray Pyrolysis —————.37 3.1.5
3.1.6 Plasma Technique – – – – – – 37, 38
3.1.7 Formation of Sol-gel Thin Films —————–.38
3.1.8 Precursor Sol—————————38-39
Sol-gel Dip Coating 3.1.8.1 —————.39
Spin Coating ————————–39-40
3.1.8.3 Halide and Chalcogenide Films Spin Deposition ——–.40-41
3.1.9 The Solution Growth Technique ———–. ———–. 41-44
Mechanism of Thin Film Condensation Formation, 3.1.9.1, 44–45
Doping via Chemical Bath Deposition (3.1.9.2) ————–.45
Chapiter IV
The Measurement Methods for Thin Film Materials and Characteristics ——–46
4.1.0 Thin Film Characteristics Measurement Techniques ——–.46
Film Thickness 4.1.1 ——————.46
4.1.1.1 Gravimetric microbalance technique ————– –47
4.1.1.2 Optical Methodology – ——————.47-48
4.1.2 Measurement of Absorbance and Transmittance———-48
4.1.3 A Method for Determining the Chemical Makeup of Thin Films.
Atomic Absorption Spectroscopic (AAS) Method, Section 4.1.3.49
4.1.3.2 X-ray Fluorescence – – – -.49-50
Infrared Spectroscopy, Section 4.1.3, 50–51
Chemical analysis that is both qualitative and quantitative (QCA) —–52
4.2.0 Structural Characterization — 52 – 53
4.2.1 Crystallographic Topography and Structure – 53 – 54
4.2.1 Transmission Electron Microscopy (TEM) — 53 – 54
Surface Structure 4.2.2 —————— 54
LEED Technique 4.2.2.1 ———————.54
RHEED Technique, Section 4.2.2.2, pages 54–55
Photo Electron Spectroscopy (PES) is described in Section 4.2.2.3.
Optical microscopy (4.2.2.4) —————–.55-56
Methodology, Section 4.3.0——–.————-. 57-58
4.3.1 Iron Copper Sulfide — 58 – 60
Characterization of optical and solid states in 4.3.2 — 60
4.3.3 Measuring Film Thickness —————60-61
4.4. Morphological Analysis: —————.–61
CHAPITER 5
Results and Observations for Version 5.0 ————–.—-62
5.1 Iron Copper Sulphide (FeCuS) Optical Properties ——–.–.—-62
Absorbance (A): 5.1.1 ———————-62
Transmittance (T): 5.1.2 ——————–.62
Reflectance (R) 5.1.3 —————————62-63
Intake Coefficient (Î) 5.1.4 —————-63
Refractive Index (n): 5.1.5 ——————–63
Optical Conductivity (o): 5.1.6 ——————64
Extinction Coefficient (k): 5.1.7 —————-64
Solid state properties are shown in Table 5.2.
Band gap Energy (Eg): ———————64-65
Dielectric Constant (real part) (Î r): 5.2.2 ————–65
5.2.3 The imaginary portion of the dielectric constant is (Î i) ————65
5.3 Iron Zinc Sulphide (FeZnS) Optical Characteristics 65
Absorbance (A) —————–.65
Transmittance (T): 5.3.2 ——————.66
Reflectance (R): 5.3.3 ——————.66
The absorption coefficient (Î) is —————.66 in section 5.3.4.
Refractive Index (n): 6.3.5 —————-66-67
Optical Conductivity (o) 5.3.6 —————-67
Extinction Coefficient (k) is 5.3.7 is —————-.67
Solid state properties (5.4) ————— 67
Band gap Energy (Eg)————–67
Dielectric constant in real units (Î r) is 5.4.2 —————.68
5.4.3 The imaginary portion of the dielectric constant is (Î i)————.68
5.5 Lead Silver Sulphide (PbAgS) Optical Properties ————68
.——————–68 5.5.1 Absorbance (A)
Transmittance (T): 5.5.2 ——————69
Reflectance (R) ——————–69 in 5.5.3
The absorption coefficient (Î) is —————.69 in section 5.5.4.
Refractive Index (n) ——————.69-70
Optical Conductivity (o) 5.5.6 ——————.–70
Extinction Coefficient (k) of 5.5.7 is —————-.70
Solid state properties are described in section 5.6.
Band gap Energy (Eg): 5.6.1 ——————71
Dielectric Constant (real part) (Î r): 5.6.2 —————.71
5.6.3 Dielectric Constant (Imaginary Part) (Î i) ——————– 71-72
5.7 Copper Silver Sulphide (CuAgS) Optical Properties———-72
Absorbance (A) = ——————.72
Transmittance (T) = 5.7.2 ——————–72
Reflectance (R) —————–.72 in 5.7.3
Absorption Coefficient (Î) 5.7.4 —————-73
Refractive Index (n): 5.7.5 ——————73
Optical Conductivity (o) 5.7.6 ——————.73
Extinction Coefficient (k): 5.7.7 ——————73
Solid state characteristics 5.8 ——————73
5.8.1 Energetic band gap —————-73-74
Dielectric Constant (real part) (Î r): 5.8.2 ————–.74
Dielectric Constant (imaginary component) (Î i) ————–.74
5.9 Copper Zinc Sulphide (CuZnS) Optical Properties———-74
Absorbance (A): 5.9.1 —————-.74
Transmittance (T) 5.9.2 ——————–75
Reflectance (R): 5.9.3: ——————.75
Absorption Coefficient (Î): 5.9.4 ———————75-76
Refractive Index (n): 5.9.5 ——————.76
Optical Conductivity (o) 5.9.6 ————–76
Extinction Coefficient (k): 5.9.7: —-.————77
Solid State Properties 5.10 —————— 77
Band gap Energy (Eg): 5.10.1 ——————77-78
The actual portion of the dielectric constant is 5.10.2 (Î r) ————–.78
The imaginary portion of the dielectric constant is 5.10.3 (Î i) ———-78
Section Six
Analysis and Discussion: 6.0 ———————–.80
6.1 The Spectral Analysis. —————— 80
6.2 Additional Optical Characteristics——————80
Solid state properties range from 80 to 81 in section 6.3.
Subtitle Seven
Final Thoughts and Advice —————-82
7.0 Concluding Statement: 82–84
7.1 Recommendation ————————.85
References————————.86-99
Figures —————–.100-154 in Appendix A
Plates from Appendix B –.——————-155-157
Slides from Appendix C ——————–158-159
Setups in Appendix D ——————160-161
Number Of Figures
Figure 5.1 shows a graph of absorbance (A) against wavelength for a thin FeCuS layer.
Figure 5.2: A graph of FeCuS thin film transmittance (T) versus wavelength ——–.101
Figure 5.3 shows the reflectance (R) of a thin layer of FeCuS as a function of wavelength.
Figure 5.4 shows the relationship between the absorption coefficient and photon energy for FeCuS thin films.
Figure 5.5 shows the refractive index as a function of photon energy for FeCuS thin film.
Figure 5.6: FeCuS thin film optical conductivity against photon energy graph,.105
Figure 5.7: FeCuS thin film attenuation coefficient vs photon energy, 106
Figure 5.8: Î2 graph
FeCuS thin film vs photon energy –.——.107
Figure 5.9: Î1/2 graph
FeCuS thin film vs photon energy —————–108
Figure 5.10 shows a graph of FeCuS thin film’s dielectric constant (real portion) vs photon energy.109
Figure 5.11 shows the relationship between the dielectric constant (imaginary component) and photon energy for FeCuS thin.
film—————————-.110
Figure 5.12 shows the wavelength-dependent absorbance (A) for a thin sheet of FeZnS.
Figure 5.13 shows the transmittance (T) of a thin film of FeZnS as a function of wavelength.
Figure 5.14 shows a wavelength-versus-reflectance graph for a thin sheet of FeZnS.
Figure 5.15 shows a graph of the FeZnS thin film’s absorption coefficient against photon energy.
Figure 5.16 shows the refractive index as a function of photon energy for FeZnS thin film.
FeZnS thin film optical conductivity against photon energy graph, shown in Figure 5.17.
Figure 5.18 shows a graph of the extinction coefficient against photon energy for a thin sheet of FeZnS.
Figure 5.19: Î2 graph
in comparison to photon energy for FeZnS thin film –.————–.118
Figure 5.20: Î1/2 graph
FeZnS thin film vs photon energy –.——–.119
Figure 5.21 shows a graph of the FeZnS thin film’s dielectric constant (real component) vs photon energy.
Figure 5.22 shows the relationship between the dielectric constant (imaginary component) and photon energy for FeZnS thin.
film—————————-.121
Figure 5.23 shows a graph of PbAgS thin film absorbance (A) vs wavelength.
Figure 5.24 shows a graph of PbAgS thin film transmittance (T) vs wavelength.
Figure 5.25 shows a graph of the reflectance (R) versus wavelength for a thin PbAgS layer.
Figure 5.26 shows a graph of the PbAgS thin film’s absorption coefficient against photon energy.
Figure 5.27 shows a graph of the refractive index against photon energy for a thin PbAgS layer.
PbAgS thin layer optical conductivity against photon energy graph (Figure 5.28), 127
Figure 5.29 shows the relationship between the extinction coefficient and photon energy for a thin sheet of PbAgS.
Figure 5.30: Î2 graph
PbAgS thin layer vs photon energy ——–.129
Figure 5.31 shows a Î1/2 graph.
PbAgS thin layer vs photon energy ——–130
Figure 5.32 shows a graph of PbAgS thin film dielectric constant (real portion) vs photon energy.
Figure 5.33 shows the relationship between the dielectric constant (imaginary component) and photon energy for PbAgS thin.
film—————————-.132
Figure 5.34 shows the wavelength-dependent absorbance (A) for a thin sheet of CuAgS.
Figure 5.35 shows a graph of CuAgS thin film transmittance (T) as a function of wavelength.
Figure 5.36 shows a graph of the reflectance (R) vs wavelength for a thin layer of CuAgS.
Figure 5.37 shows a graph of the CuAgS thin film’s absorption coefficient against photon energy.
Figure 5.38 shows the relationship between the refractive index and photon energy for a thin film of CuAgS.
CuAgS thin film optical conductivity against photon energy graph, Figure 5.39, 138
CuAgS thin film attenuation coefficient against photon energy graph (Figure 5.40), 139
Figure 5.41: Î2 graph
CuAgS thin film vs photon energy ——–.140
Figure 5.42: Î1/2 graph
CuAgS thin film vs photon energy —————–.141
Figure 5.43 shows a graph of CuAgS thin’s dielectric constant (real portion) vs photon energy.
film—————————-142
Figure 5.44 shows a graph of CuAgS thin’s dielectric constant (imaginary component) vs photon energy.
film—————————-143
Figure 5.45 shows the wavelength-dependent absorbance (A) for a thin sheet of CuZnS.
Figure 5.46 shows the transmittance for CuZnS thin films as a function of wavelength.
Figure 5.47 shows a graph of reflectance (R) vs wavelength for a thin CuZnS layer.
Figure 5.48 shows a graph of the CuZnS thin film’s absorption coefficient against photon energy.
Figure 5.49 shows the relationship between the refractive index and photon energy for CuZnS thin films.
CuZnS thin film optical conductivity against photon energy graph, Figure 5.50, 149
Figure 5.51 shows a graph of the CuZnS thin film’s extinction coefficient against photon energy.
Figure 5.52: Î2 graph
CuZnS thin film vs photon energy ——–.151
Figure 5.53: Î1/2 graph
CuZnS thin film vs photon energy —————–.152
Figure 5.54 shows a graph of the CuZnS thin film’s dielectric constant (real portion) vs photon energy.
Figure 5.55 shows a graph of photon energy vs imaginary portion of the dielectric constant for CuZnS thin.
film—————————-.154
Numbering Plates
A photomicrograph of FeCuS is shown in Plate 5.1.
A photomicrograph of FeZnS is shown in Plate 5.2.
Plate 5.3, a photomicrograph of PbAgS, shows 156
CuAgS photomicrograph in plate 5.4, number 157
Plate 5.5, CuZnS—————157 photomicrograph
NUMBER OF SLIDES
FeCuS thin film image from slide 5.1 —————–158
FeZnS thin film image from slide 5.2 —————–158
PbAgS thin film image from slide 5.3 —————–159
CuAgS thin film image from slide 5.4 —————–159
CuZnS thin film image from slide 5.5 —————–159
SET UPS LIST
Experimental Setup in Step 3.1 ——————-160
Create a 4.1 Growth Process Flow Chart –.——–.——- 161
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